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SiO₂ passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

《能源前沿（英文）》 2017年第11卷第1期页码 52-59 doi: 10.1007/s11708-016-0429-3

摘要： Surface passivation is one of the primary requirements for high efficient silicon solar cells. Though the current existed passivation techniques are effective, expensive equipments are required. In this paper, a comprehensive understanding of the SiO passivation layer grown by liquid phase deposition (LPD) was presented, which was cost-effective and very simple. It was found that the post-annealing process could significantly enhance the passivation effect of the LPD SiO film. Besides, it was revealed that both chemical passivation and field-effect passivation mechanisms played important roles in outstanding passivation effect of the LPD SiO film through analyzing the minority carrier lifetime and the surface recombination velocity of n-type and p-type silicon wafers. Although the deposition parameters had little influence on the passivation effect, they affected the deposition rate. Therefore, appropriate deposition parameters should be carefully chosen based on the compromise of the deposition rate and fabrication cost. By utilizing the LPD SiO film as surface passivation layer, a 19.5%-efficient silicon solar cell on a large-scale wafer (156 mm × 156 mm) was fabricated.

关键词： Si solar cell passivation SiO₂ liquid phase deposition carrier lifetime

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Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitatedback contact-heterojunction solar cell (IBC-HJ)

Rui JIA,Ke TAO,Qiang LI,Xiaowan DAI,Hengchao SUN,Yun SUN,Zhi JIN,Xinyu LIU

《能源前沿（英文）》 2017年第11卷第1期页码 96-104 doi: 10.1007/s11708-016-0434-6

摘要： Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( ) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.

关键词： amorphous silicon front surface field simulations interdigitated back contact-heterojunction solar cells

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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿（英文）》 2020年第14卷第6期页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要： Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films solar cells quadruple junction solar cell amorphous silicon silicon germanium alloy quantum efficiency

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晶体硅太阳电池最大功率下负载的函数表达

丁金磊,程晓舫,余世杰,何慧若

《中国工程科学》 2005年第7卷第6期页码 45-49

摘要：

从实际的晶体硅太阳电池电路基本方程出发，推导出晶体硅太阳电池最大功率下负载的函数表达。与传统的电工电路不同，太阳电池电路最大功率点下的负载大于太阳电池内阻，并随着温度的升高，其比值逐渐降低。实验结果与理论吻合。

关键词：晶体硅太阳电池最大功率负载

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年第5卷第3期页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling silicon crystal growth solar cells

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POCl₃ diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

《能源前沿（英文）》 2017年第11卷第1期页码 42-51 doi: 10.1007/s11708-016-0433-7

摘要： POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

关键词： POCl₃ diffusion emitter recombination oxidation silicon

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

《能源前沿（英文）》 2017年第11卷第1期页码 1-3 doi: 10.1007/s11708-016-0436-4

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

《能源前沿（英文）》 2017年第11卷第1期页码 78-84 doi: 10.1007/s11708-016-0435-5

摘要： n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of>22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Furthermore, the dependence of SHJ solar cell open-circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 µm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 µm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.

关键词： n-type Cz-Si thinner wafer surface texture high efficiency SHJ solar cell

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决定晶体硅太阳电池工作状态的独立参量的确定

丁金磊,程晓舫,翟载腾,查,茆美琴

《中国工程科学》 2007年第9卷第4期页码 94-98

摘要：

从晶体硅太阳电池功率全微分方程出发，结合开路电压和功率随温度、日照变化的实验事实，研究影响晶体硅太阳电池工作状态的各参量的独立性。从数学上确定出其独立变量为日照强度、电池温度和负载，并得出了串联内阻是温度的函数的结论。串联内阻的实验数据验证了理论分析结果的正确性。

关键词：晶体硅太阳电池功率全微分参量独立性串联内阻

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Plated contacts for solar cells with superior adhesion strength to screen printed solar cells

R. CHEN,S. WANG,A. WENHAM,Z. SHI,T. YOUNG,J. JI,M. EDWARDS,A. SUGIANTO,L. MAI,S. WENHAM,C. CHONG

《能源前沿（英文）》 2017年第11卷第1期页码 72-77 doi: 10.1007/s11708-016-0428-4

摘要： The improvement of adhesion strength and durability of plated contacts is required for cell manufacturers to gain confidence for large-scale manufacturing. To overcome weak adhesion at the metal/Si interface, new approaches were developed. These involve the formation of laser-ablated anchor points, or grooves in the extreme case of overlapping anchor points, in the heavily doped silicon surface. When plated, these features greatly strengthen the mechanical adhesion strength of the metal. A stylus-based adhesion tester was developed specifically for evaluating the effectiveness of plated contacts to smooth silicon surfaces. The use of such a tester was also extended in this work to textured and roughened surfaces to allow evaluation of different metal contacting approaches. The adhesion strengths for various metal contacting schemes were evaluated, including screen-printed silver contacts, nickel/copper (Ni/Cu) light-induced plated (LIP) contacts for laser-doped selective emitter (LDSE) cells, buried-contact solar cells (BCSCs), and Ni/Cu LIP contacts formed with laser-ablated anchoring points in selective emitter (LAASE) cells. The latter has superior adhesion strength. The standard “peel test” of the industry was compared to the stylus-based adhesion testing, with the latter shown value for testing metal contacts on smooth surfaces but with caution needed for use with textured or roughened surfaces.

关键词： light-induced plating metal adhesion strength copper plating metal contacts solar cell durability silicon solar cells

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An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

《能源前沿（英文）》 2017年第11卷第1期页码 67-71 doi: 10.1007/s11708-016-0430-x

摘要： Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.

关键词： Boron-oxygen defects c-Si solar cells light-induced degradation passivation forward bias

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Highlights of mainstream solar cell efficiencies in 2022

《能源前沿（英文）》 2023年第17卷第1期页码 9-15 doi: 10.1007/s11708-023-0871-y

摘要： Highlights of mainstream solar cell efficiencies in 2022

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柔性太阳电池发展研究

王辉, 曹越先, 冯江山, 杜敏永, 张豆豆, 王开, 秦炜, 刘生忠

《中国工程科学》 2018年第20卷第3期页码 66-73 doi: 10.15302/J-SSCAE-2018.03.010

摘要：

柔性太阳电池可应用在卫星、飞艇、无人机、单兵装备、光伏建筑一体化以及可穿戴智能设备上，极具发展前景。本文介绍了柔性硅薄膜太阳电池、柔性碲化镉太阳电池、柔性铜铟镓硒太阳电池和柔性钙钛矿太阳电池的电池结构、制备方法和发展现状，分析了柔性太阳电池效率提升以及产业化过程中存在的问题，并从柔性衬底选择、电池效率提升、产业化装备制造等几个方面，对柔性太阳电池下一步发展提出了建议。

关键词：柔性太阳电池硅薄膜铜铟镓硒碲化镉钙钛矿

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Highlights of mainstream solar cell efficiencies in 2021

《能源前沿（英文）》 2022年第16卷第1期页码 1-8 doi: 10.1007/s11708-022-0816-x

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利用三元合金保护和催化的硅光阳极与廉价硅太阳能电池相结合实现12.0%的太阳能制氢效率 Article

何凌云, 洪欣, 王亦清, 邢众航, 耿嘉峰, 郭鹏慧, 苏进展, 沈少华

《工程（英文）》 2023年第25卷第6期页码 128-137 doi: 10.1016/j.eng.2022.03.023

摘要：

n型硅（n-Si）表面在水溶液中容易被氧化和钝化，导致其在光电化学（PEC）分解水的析氧反应（OER）动力学缓慢。本工作通过欠电位沉积成功地在p+n-Si基底上电沉积了三金属Ni0.9Fe0.05Co0.05保护层。制备的Ni0.9Fe0.05Co0.05/p+n-Si光阳极具有优异的稳定性和PEC水氧化活性，具有相对低的OER起始电位（相对于可逆氢电极电势（RHE）仅为0.938 V），并且在1.23 V vs. RHE电位时具有较高的光电流密度（33.1 mA∙cm^-2），显著优于Ni/p+n-Si光阳极。工作证明了Fe在Ni层的掺杂会在Ni0.9Fe0.05Co0.05/p+n-Si界面处产生较大的能带弯曲，促进界面电荷分离。此外，Co的加入会产生丰富的Ni³⁺和氧空位（Ov），作为活性位点可以加速OER动力学过程，协同促进PEC过程中的水氧化的活性。令人鼓舞的是，通过将Ni0.9Fe0.05Co0.05/p+n-Si光阳极连接到廉价的硅太阳能电池上，所制备的集成光伏/PEC（PV/PEC）器件实现了无偏压下高达12.0%的太阳制氢能量转换效率。这项工作提供了一种简单的方法来设计高效、稳定的n-Si基光阳极，并对其构效关系有了深刻的理解；这种方法制备的材料在集成低成本PV/PEC器件用于无辅助太阳能驱动水分解方面具有巨大的潜力。

关键词： n-Si 光阳极水分解光伏/光电化学器件

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标题作者时间类型操作

SiO₂ passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

期刊论文

Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitatedback contact-heterojunction solar cell (IBC-HJ)

Rui JIA,Ke TAO,Qiang LI,Xiaowan DAI,Hengchao SUN,Yun SUN,Zhi JIN,Xinyu LIU

期刊论文

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

晶体硅太阳电池最大功率下负载的函数表达

丁金磊,程晓舫,余世杰,何慧若

期刊论文

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

期刊论文

POCl₃ diffusion for industrial Si solar cell emitter formation